Stochastic simulation studies of molecular resists |
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| Affiliation: | 1. Institute of Microelectronics (IMEL), NCSR “Demokritos”, 15310 Aghia Paraskevi, Attiki 15310, Greece;2. Institute of Physical-Chemistry (IPC), NCSR “Demokritos”, 15310 Aghia Paraskevi, Attiki 15310, Greece;1. Department of Chemistry, Texas A&M University, College Station, TX 77843-3255, United States;2. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan;3. Center for Condensed Matter Sciences, National Taiwan University, Taipei, 10617, Taiwan;1. Laboratory of Agricultural Entomology, Benaki Phytopathological Institute, Greece;2. Natural Products Synthesis and Bioorganic Chemistry Lab., NCSR “Demokritos”, Greece;3. Laboratory of Biological Control of Pesticides, Benaki Phytopathological Institute, Greece;4. Chemistry Laboratories, Agricultural University of Athens, Greece;5. Faculty of Agricultural Development, Democritus University of Thrace, Greece;1. Research Division for Industry & Environment, Korea Atomic Energy Research Institute, Jeongeup-si, Jeollabuk-do 580-185, Republic of Korea;2. Department of Environmental Engineering, Konkuk University, Seoul 143-701, Republic of Korea;1. Natural Products Synthesis and Bioorganic Chemistry Laboratory, Institute of Advanced Materials, Physicochemical Processes, Nanotechnology and Microsystems, NCSR “Demokritos” 15310 Ag. Paraskevi, Attiki, POB 60228, Athens, Greece;2. Chemistry Laboratories, Agricultural University of Athens, 75 Iera Odos Str., 11855 Athens, Greece;3. Laboratory of Biological Control of Pesticides, Benaki Phytopathological Institute, 8 S. Delta Str., 14561 Kifissia, Athens, Greece;4. Laboratory of Agricultural Entomology, Department of Entomology and Agricultural Zoology, Benaki Phytopathological Institute, 8 S. Delta Str., 14561 Kifissia, Athens, Greece |
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| Abstract: | The influence of resist molecular weight as well as its architecture becomes important in lithographic scales aiming at sub-45 nm resolution. The effects of processing and resist molecular geometry on line-edge roughness (LER) should be well understood in order to meet the ITRS lithographic specifications. In this work, two-dimensional simulations and comparisons of the LER between films of molecular resists and resist films made of oligomers with the same molecular diameter, showed that in all cases molecular resists have lower LER. Explanations of this behavior are proposed based on molecular architecture and the free volume distribution in the resist film. It was also found that the size of free volume regions is less in molecular resist than in the corresponding oligomers. |
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