10 nm lines and spaces written in HSQ,using electron beam lithography |
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| Affiliation: | 1. Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands;2. Delft University of Technology, Kavli Institute of Nanoscience, The Netherlands;1. Department of Electrical and Computer Engineering, Auburn University, Auburn, AL 36849, United States;2. Samsung Electronics, Mask Development Team, Hwasung, Kyunggi-Do, 445-701, Republic of Korea;1. Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials and Industrial Technologies, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, PR China;2. School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, PR China;3. Wenzhou Polytechnic, Wenzhou 325035, PR China |
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| Abstract: | Hydrogen silsesquioxane (HSQ) is a high-resolution negative-tone inorganic resist with an established resolution below 10 nm. Using 100 keV electron beam lithography, we report the achievement of isolated 6 nm wide lines in 20 nm thick HSQ layers on silicon substrates. We also achieved 10 nm lines and spaces in a 10 nm HSQ layer. This is the smallest pitch (20 nm) achieved to date using HSQ resist. Experiments in order to investigate the effect of KOH based developer on ultimate resolution have been also performed and resulted in 7 nm wide lines. These results, in combination with the good etching resistance of HSQ, prove the versatility of HSQ for nanolithography. |
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