Charge pumping spectroscopy: HfSiON defect study after substrate hot electron injection |
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| Affiliation: | 1. Dpot. Física Aplicada III, Universidad Complutense de Madrid, E-28040 Madrid, Spain;2. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;3. Liverpool John Moores University, United Kingdom;4. ESAT, KULeuven, Belgium;5. Chemistry department, KULeuven, Belgium;1. Department of Materials and Environmental Chemistry, Arrhenius Laboratory, Stockholm University, 10691, Stockholm, Sweden;2. Department of Materials Science and Engineering, Royal Institute of Technology, 100 44, Stockholm, Sweden;3. School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China;4. School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London, E1 4NS, UK;1. Inter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea;2. Department of Electronic Engineering, Gachon University, Seongnam-si, Gyeonggi-do 13120, South Korea;1. School of Materials Science and Engineering, UNSW Australia, Sydney, NSW 2052, Australia;2. Department of Physics, Technical University of Denmark, Fysikvej, 2800, Kgs. Lyngby, Denmark;3. Group for Ferroelectrics and Functional Oxides, Swiss Federal Institute of Technology in Lausanne-EPFL, 1015 Lausanne, Switzerland;1. imec, Kapeldreef 75, 3001 Leuven, Belgium;2. Department of Electrical Engineering, KU Leuven, Leuven, Belgium;3. Centre for Microsystems Technology, Ghent University, Gent, Belgium;4. Department of Information Engineering, University of Padova, Padova, Italy;1. IHP-Leibniz-Institut für Innovative Mikroelektronik, Frankfurt (Oder), Germany;2. Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Granada, Spain;3. Departamento de Estadística e Investigación Operativa and IEMath-GR, Universidad de Granada, Granada, Spain;4. BTU Cottbus-Senftenberg, Cottbus, Germany |
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| Abstract: | Spectroscopic charge pumping (CP) is used to study the evolution of the energy distribution of trapped electrons within HfSiON/SiO2 gate stacks under substrate hot electron injection (SHEI). Base level CP measurements with large pulse amplitude allow an efficient charging/discharging of traps and reaching two defect bands in the HfSiON situated at 0.40 and 0.85 eV above the Si conduction band, respectively. Unlike standard constant voltage stress (CVS), SHEI enables full control of the stress by separately controlling the applied gate field, the injected electron energy, and the fluence. During CVS, HfSiON defects at 0.40 eV are generated. Conversely, during SHEI, either the shallow or the deep defects are preferentially created depending on the gate field as well as electron energy. |
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