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Design considerations and electro-mechanical simulation of an inertial sensor based on a floating gate metal-oxide semiconductor field-effect transistor as transducer |
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| Authors: | Abarca Jiménez G. S. Reyes Barranca M. A. Mendoza Acevedo S. Munguía Cervantes J. E. Alemán Arce M. A. |
| Affiliation: | 1.Department of Electrical Engineering, CINVESTAV-IPN, Av. Instituto Politécnico Nacional 2508, 07360, Mexico, Mexico ;2.Centro de Investigación en Computación- Instituto Politécnico Nacional, Av. Juan de Dios Bátiz, and Av. Miguel Othón de Mendizábal, 07738, Mexico, Mexico ;3.Centro de Nanociencias y Micro y Nano Tecnologías- Instituto Politécnico Nacional, Luis Enrique Erro s/n, 07738, Mexico, Mexico ; |
| Abstract: | Microsystem Technologies - In this paper, an analysis on the electrostatic actuation in capacitive complementary metal-oxide semiconductor and micro-electro-mechanical systems (CMOS–MEMS)... |
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