Template replication for full wafer imprint lithography |
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| Affiliation: | 1. Crystal Growth Lab, Departamento de Física de Materiales, Universidad Autónoma de Madrid, Madrid 28049, Spain;2. Department of Physics, SSN College, University of Delhi, Alipur, Delhi 110036, India;3. Crystal Growth Lab, Department of Physics, Jamia Millia Islamia, New Delhi 110025, India;4. CSIR-National Physical Laboratory, New Delhi 110012, India;5. Department of Physics, Kakatiya University, Warangal 506 009, India;1. Department of Bioengineering and Therapeutic Sciences, University of California, San Francisco, California, USA;2. Department of Chemical Engineering, The Pennsylvania State University, University Park, PA, USA;3. Department of Medicine and Division of Nephrology and Hypertension, Vanderbilt University, Nashville, TN, USA;1. Department of Materials Science & Engineering, University of Wisconsin-Madison, Madison, WI 53706, United States;2. Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112, United States;3. Forest Biopolymers Science and Engineering, USDA Forest Service, Forest Products Laboratory, Madison, WI 53726, United States;1. College of Computer and Information Sciences, King Saud University, Riyadh 11543, Saudi Arabia;2. Institute of Structural Mechanics, Bauhaus Universität-Weimar, Marienstr 15, D-99423, Weimar, Germany |
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| Abstract: | Typically, the Step and Flash Imprint Lithography (S-FILTM) process uses field-to-field drop dispensing of UV-curable liquids for step-and-repeat patterning. Several applications, including patterned magnetic media, photonic crystals, and wire grid polarizers, are better served by a process that allows high-throughput, full-wafer patterning of sub-100 nm structures with modest alignment. Full-wafer imprinting requires a full-wafer template; however, creation of a wafer-scale imprint template with sub-100 nm structures is not feasible with direct-writing approaches. This paper describes a practical methodology for creating wafer-scale templates suitable for full-wafer imprinting of sub-100 nm structures.The wafer-scale template is replicated from a smaller area master template using the S-FIL step-and-repeat process. The pattern is repeated to accommodate the wafer substrate targeted for a particular application. The tone of the master template is maintained by employing an SFIL/RTM (reverse tone) pattern transfer process. To create the replicate template, the patterns are imprinted onto a fused silica wafer that has been coated with chromium and an organic transfer layer. A silicon-containing resist, SilspinTM, is spun on to planarize the organic monomer material. Following an etch back of the Silspin, the monomer and transfer layer are patterned using the Silspin as a hard mask. The Silspin and monomer stack then serves as a masking layer for the chromium and fused silica etches. The remaining monomer and chromium are then removed to create a conformal replicate template. |
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