Application of combinatorial methodologies for work function engineering of metal gate/high-κ advanced gate stacks |
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| Affiliation: | 1. National Institute of Standards and Technology, Gaithersburg, Maryland, USA 20899;2. IMEC, B-3001 Leuven, Belgium, also at Dept. of Chemistry, KULeuven, Belgium;3. University of Maryland, College Park, Maryland 20740;1. School of Physics and Materials Science, Anhui University, Hefei 230039, China;2. National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai 200083, China;1. INFN–LNF, XLab Frascati, Via E. Fermi, 40, I-00044 Frascati (Rome), Italy;2. RAS P.N. Lebedev Physical Institute, Moscow, Russia;3. National Research Nuclear University MEPhI, Moscow, Russia;1. School of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, South Korea;2. SK Hynix Semiconductor Inc., 2091, Gyeongchung-daero, Bubal-eub, Icheon 136-1, South Korea;1. Centre for High Resolution Electron Microscopy, College of Material Science and Engineering, Hunan University, Changsha 410082, China;2. Hunan Province Key Laboratory for Spray Deposition Technology and Application, Hunan University, Changsha 410082, China;3. College of Chemistry and Biological Engineering, Changsha University of Science and Technology, Changsha 410076, China;4. Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, TX 78249, USA;5. The Texas Center for Superconductivity, University of Houston, Houston, TX 77204, USA;1. School of Physical Science and Technology, China University of Mining and Technology, Xuzhou 221116, China;2. School of Physics, The University of Sydney, Sydney, New South Wales 2006, Australia;3. School of Mathematics, China University of Mining and Technology, Xuzhou 221116, China |
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| Abstract: | This paper uses combinatorial methodologies to investigate the effect of TaN-AlN metal gate electrode composition on the work function, for (TaN-AlN)/Hf-Si-O/SiO2/Si capacitors. We demonstrate the efficacy of the combinatorial technique by plotting work function for more than thirty Ta1-xAlxNy compositions, with x varying from 0.05 to 0.50. The work function is shown to continuously decrease, from about 4.9 to about 4.7 eV, over this range. Over the same range, oxide fixed charge is seen to go from about -2.5 × 1012 cm−3 to about zero. The work functions reported here are about 0.1 eV higher than in a previous study, but are still about 0.2 eV smaller than required for PMOS device applications. |
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