The effect of photon energy and temperature on the persistent tunneling photoconductivity effect in Al/δ(Si)-GaAs structures |
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Authors: | I N Kotel’nikov S E Dizhur M N Feiginov N A Mordovets |
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Affiliation: | 1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, 125009, Russia 2. Technische Universit?t Darmstadt, D-64283, Darmstadt, Deutschland
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Abstract: | The phenomenon of persistent tunneling photoconductivity was studied using the tunneling spectroscopy technique at liquid-helium temperature: the separation between the unoccupied levels in a δ-doped layer at the GaAs surface decreased after illumination. This decrease was due to an increase in the width of the quantum well of the δ-doped layer. For photon energies hv exceeding the GaAs band gap E g , this increase in the width of the quantum well was related to the accumulation of positive charge in the depth of GaAs induced by the generation of the electron-hole pairs and photoionization of deep centers. For hv < E g (including the case of CO2 laser), only photoionization is important. The experimental data agree with the self-consistent calculations. The critical temperature for the effect has been determined (T c = 45 K); at higher temperatures, the effect disappears. |
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