GaAs-AlxGa1-xAs双异质结激光器的伏安特性 |
| |
引用本文: | 虞丽生. GaAs-AlxGa1-xAs双异质结激光器的伏安特性[J]. 中国激光, 1980, 7(7): 9-12 |
| |
作者姓名: | 虞丽生 |
| |
作者单位: | 虞丽生:北京大学物理系
|
| |
摘 要: | 测量了77~300K 范围内 GaAs-AlxGa1-xAs DH 激光器的伏安特性。典型的正向特性曲线可用下式描写:I=I1+I2=Is1exp(AV)+Is1exp(q/nkT V)A 和 n 是只与温度有微弱关系的参数。
|
收稿时间: | 1979-11-14 |
Voltage-current characteristics of GaAs-AlxGa1-xAs As double heterojunction lasers |
| |
Abstract: | Voltage-current characteristics of GaAs-AlαGa1-αAs DH laser diodes have been measured at different temperatures in the range of 77-300K.Typical characteristics in the forward bias of many investigated diodes can be described by: I=I1+I2=1-s1,exp(AV)+Iexp((p/nkT)V) where A and n are parameters Weakly dependent on temperature. |
| |
Keywords: | |
|