| GaAs-AlxGa1-xAs双异质结激光器的伏安特性 |
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| 引用本文： | 虞丽生. GaAs-AlxGa1-xAs双异质结激光器的伏安特性[J]. 中国激光, 1980, 7(7): 9-12 |
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| 作者姓名： | 虞丽生 |
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| 作者单位： | 虞丽生:北京大学物理系
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| 摘 要： | 测量了77～300K 范围内 GaAs-AlxGa1-xAs DH 激光器的伏安特性。典型的正向特性曲线可用下式描写:I=I1+I2=Is1exp（AV）+Is1exp（q/nkT V）A 和 n 是只与温度有微弱关系的参数。
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| 收稿时间： | 1979-11-14 |
Voltage-current characteristics of GaAs-AlxGa1-xAs As double heterojunction lasers |
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| Abstract: | Voltage-current characteristics of GaAs-AlαGa1-αAs DH laser diodes have been measured at different temperatures in the range of 77-300K.Typical characteristics in the forward bias of many investigated diodes can be described by: I=I1+I2=1-s1,exp（AV）+Iexp（（p/nkT）V） where A and n are parameters Weakly dependent on temperature. |
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