A 146-mm/sup 2/ 8-gb multi-level NAND flash memory with 70-nm CMOS technology |
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| Authors: | Hara T Fukuda K Kanazawa K Shibata N Hosono K Maejima H Nakagawa M Abe T Kojima M Fujiu M Takeuchi Y Amemiya K Morooka M Kamei T Nasu H Chi-Ming Wang Sakurai K Tokiwa N Waki H Maruyama T Yoshikawa S Higashitani M Pham TD Yupin Fong Watanabe T |
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| Affiliation: | SoC R&D Center, Toshiba Corp. Semicond. Co., Kanagawa, Japan; |
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| Abstract: | An 8-Gb multi-level NAND Flash memory with 4-level programmed cells has been developed successfully. The cost-effective small chip has been fabricated in 70-nm CMOS technology. To decrease the chip size, a one-sided pad arrangement with compacted core architecture and a block address expansion scheme without block redundancy replacement have been introduced. With these methods, the chip size has been reduced to 146 mm/sup 2/, which is 4.9% smaller than the conventional chip. In terms of performance, the program throughput reaches 6 MB/s at 4-KB page operation, which is significantly faster than previously reported and very competitive with binary Flash memories. This high performance has been achieved by the combination of the multi-level cell (MLC) programming with write caches and with the program voltage compensation technique for neighboring select transistors. The read throughput reaches 60 MB/s using 16I/O configuration. |
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