Effect of annealing in oxygen radicals on luminescence and electrical conductivity of ZnO:N films |
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| Authors: | A. N. Georgobiani A. N. Gruzintsev V. T. Volkov M. O. Vorob’ev |
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| Affiliation: | (1) Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia;(2) Institute of Microelectronic Technology and High Purity Materials, Chernogolovka, Moscow oblast, 142432, Russia |
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| Abstract: | It is shown that the introduction of a nitrogen acceptor impurity when growing zinc oxide films can result in the formation of hole conduction only after annealing in atomic oxygen vapor. Annealing affects not only electrical properties but also the luminescence of ZnO:N. The bands in the photoluminescence spectrum, which are related to nitrogen, appear in the ultraviolet and visible regions. |
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