4H-SiC结势垒肖特基二极管VRSM特性研究

通过器件模拟仿真软件Sentauras和高分辨率透射电子显微镜（High-Resolution Transmission Electron Microscopy ，简称HRTEM）研究了4H-SiC结势垒肖特基二极管（Junction Barrier Schottky ，简称JBS）在反向浪涌电压应力作用下的失效机理；进而重点研究了结终端扩展区（Junction Termination Extension ，简称JTE）的长度、深度和掺杂浓度对该器件反向浪涌峰值电压（Maximum Surge Peak Reverse Voltage ，简称VRSM）的影响，并结合JBS的基本结构对其进行优化设计；最后，流片测试显示优化设计的4H-SiC结势垒肖特基二极管的VRSM值约为1450V，比原器件提升了20%左右。

Investigation on VRSM Characteristics of 4H-SiC Junction Barrier Schottky Diode

The failure mechanism of 4H-SiC Junction Barrier Schottky (JBS) diode under surge reverse stress has been investigated by device simulators Sentauras and high-resolution transmission electron microsco-py(HRTEM). Moreover, the influences upon the maximum surge peak reverse voltage (VRSM) from the depth, length and doping concentration of the junction termination extension (JTE) region in the 4H-SiC JBS diode have been also studied, after that, the optimization design of the device is carried out. Finally, the measurement result shows that, the VRSM of the optimized 4H-SiC JBS diode has achieved at 1450V, which is increased by about 20% comparing with the original one.