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Ti/Cu/Ti部分瞬间液相连接Si_3N_4的界面反应和连接强度
引用本文:周飞,李志章. Ti/Cu/Ti部分瞬间液相连接Si_3N_4的界面反应和连接强度[J]. 中国有色金属学报, 2001, 0(2)
作者姓名:周飞  李志章
作者单位:江苏理工大学材料系!镇江212013(周飞),浙江大学材料系!杭州310027(李志章)
摘    要:用Ti/Cu/Ti多层中间层在 12 73K进行氮化硅陶瓷部分瞬间液相连接 ,实验考察了保温时间对连接强度的影响。用SEM ,EPMA和XRD对连接界面进行微观分析 ,并用扩散路径理论 ,研究了界面反应产物的形成过程。结果表明 :在连接过程中 ,Cu与Ti相互扩散 ,形成Ti活度较高的液相 ,并与氮化硅发生反应 ,在界面形成Si3N4 /TiN/Ti5Si3 Ti5Si4 TiSi2 /TiSi2 Cu3Ti2 (Si) /Cu的梯度层。保温时间主要是通过影响接头反应层厚度和残余热应力大小而影响接头的连接强度

关 键 词:部分瞬间液相连接  氮化硅  扩散路径  界面反应  连接强度

Interfacial reaction and joint strength of Si_3N_4 partial transient liquid-phase bonded with Ti/Cu/Ti multi-interlayer
ZHOU Fei ,LI Zhi zhang. Interfacial reaction and joint strength of Si_3N_4 partial transient liquid-phase bonded with Ti/Cu/Ti multi-interlayer[J]. The Chinese Journal of Nonferrous Metals, 2001, 0(2)
Authors:ZHOU Fei   LI Zhi zhang
Affiliation:ZHOU Fei 1,LI Zhi zhang 2
Abstract:The partial transient liquid phase(PTLP) bonding of silicon nitride was carried out at 1?273?K with Ti/Cu/Ti multi interlayer. The effect of bonding time and interfacial reaction on the joint strength were investigated and the interfacial microstructures were observed and analyzed using SEM, EPMA and XRD respectively. The formation and transition processes of interface layer sequence at the interface were discussed by diffusion path. It is shown that Cu Ti transient liquid alloy forms on the surface of silicon nitride and reacts with silicon nitride on the interface at 1?273?K, forming the Si 3N 4/TiN/Ti 5Si 3 Ti 5Si 4 TiSi 2/TiSi 2 Cu 3Ti 2(Si)/Cu gradient interface. Owing to the variation of concentration in transient liquid, the diffusion path in the subsequent reaction changes. According to the microstructural analyses, the joint strength is affected by the thickness of reaction layer and the amount of residual thermal stresses which are affected by the bonding time. [
Keywords:partial transient liquid phase bonding  silicon nitride  interface reaction  diffusion path  bonding strength
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