Lanthanide (Tb)-doped HfO/sub 2/ for high-density MIM capacitors |
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Authors: | Sun Jung Kim Byung Jin Cho Ming-Fu Li Chunxiang Zhu Chin A Dim-Lee Kwong |
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Affiliation: | Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore; |
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Abstract: | A high-density metal-insulator-metal (MIM) capacitor with a lanthanide-doped HfO/sub 2/ dielectric prepared by physical vapor deposition (PVD) is presented for the first time. A significant improvement was shown in both the voltage coefficient of capacitance (VCC) and the leakage current density of MIM capacitor, yet the high capacitance density of HfO/sub 2/ dielectrics was maintained by achieving the doping of Tb with an optimum concentration in HfO/sub 2/. This technique allows utilizing thinner dielectric film in MIM capacitors and achieving a capacitance density as high as 13.3 fF//spl mu/m/sup 2/ with leakage current and VCC values that fully meet requirements from year 2005 for radio frequency (RF) bypass capacitors applications. |
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