High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide |
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Authors: | Veena Misra Xiaoli Xu Brian E. Hornung Richard T. Kuehn Donald S. Miles John R. Hauser Jimmie J. Wortman |
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Affiliation: | (1) Department of Electrical and Computer Engineering, North Carolina State University, 27695 Raleigh, NC |
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Abstract: | In the present study, we have performed electrical characterization of oxides deposited via rapid thermal chemical vapor deposition using SiH4 and N2O. We have investigated the effect of temperature, pressure, and SiH4 to N2O ratio on the electrical and material properties of as-deposited films. We have found that as-deposited oxides deposited at low temperatures, low pressures, and with a low silane to nitrous oxide ratio of ~0.5% give good material and electrical properties. The as-deposited films are stoichiometric in nature and have high deposition rates. As-deposited films had very low Dit values, high breakdown fields, and excellent subthreshold swing. The leakage currents and metal oxide semiconductor field effect transistor current drive, although lower than thermal oxides, were found to be quite acceptable. We have also investigated the thickness dependence of the films and found that as the film thickness is reduced below 50Å, the reliability improves for all oxides including the silicon-rich deposited oxides. |
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Keywords: | Electrical properties gate dielectrics silicon-based oxides rapid thermal chemical vapor deposition (RTCVD) |
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