Affiliation: | aCollege of Physics Science & Technology, Hebei University, No.180 East Wusi Road, Hebei 071002, China bKey Laboratory of Metastable Materials Science and Technology, Yanshan University, Hebei 066004, China |
Abstract: | Techniques such as high energy electron diffraction (RHEED), atomic force microscope (AFM) are used to characterize LNO film prepared by rf sputtering. It is found that LNO films are epitaxially grown on the SrTiO3 (STO) substrates. Root mean square roughness (RMS) of LNO film increases with increasing growth temperature, and then becomes somewhat saturated when deposition temperature is higher than 350 °C. Meanwhile, resistivity of LNO film decreases with increasing growth temperature, and becomes relatively stable when deposition temperature is higher than 200 °C. It is found that ferroelectric properties of LaNiO3/Pb(Zr,Ti)O3/LaNiO3 (LNO/PZT/LNO) capacitors prepared on STO substrate strongly depend on the deposition temperature of LNO bottom electrode. The higher the deposition temperature of LNO bottom electrode, the larger is the switchable polarization of LNO/PZT/LNO capacitor. |