自对准硅化物工艺研究

对适用于深亚微米CMOS器件的各种自对准硅化物工艺进行了讨论，并对不同硅化物薄膜的特性进行了分析。结果表明，随着大规模集成电路特征尺寸的不断缩减及其对器件性能要求的不断提高，常规Ti和Co的自对准硅化物工艺已经不能满足器件特征尺寸进一步缩小的需要；Ni的自对准硅化物工艺可以很好地满足超深亚微米及纳米器件对硅化物的需求。

An Investigation into Different Salicide Process Technologies

Different self-aligned silicide technologies for sub-micron CMOS VLSI's have been investigated intensively. Characteristics of different silicide films have been analyzed. It has been shown that, with the ever shrinking feature size in VLSI's and the increasing demand on device performances, the conventional Ti sicilide and Co sicilide could no longer meet the requirement for deep sub-micron CMOS VLSI applications, while Ni silicide technology is applicable for very- or ultra-deep sub-micron CMOS VLSI, and even nano-devices by improving NiSi salicide process.