| Si-玻璃阳极键合失效机理研究 |
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| 引用本文： | 毋正伟,陈德勇,夏善红.Si-玻璃阳极键合失效机理研究[J].微纳电子技术,2010,47(10). |
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| 作者姓名： | 毋正伟 陈德勇 夏善红 |
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| 作者单位： | 1. 中国科学院,电子学研究所,传感技术国家重点实验室,北京,100190;中国科学院研究生院,北京,100080
2. 中国科学院,电子学研究所,传感技术国家重点实验室,北京,100190 |
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| 基金项目： | 传感技术国家重点实验室基金资助项目 |
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| 摘 要： | 在采用Si-玻璃阳极键合技术制备微惯性传感器的过程中,实验发现键合圆片中心区域键合失效。通过对键合机理和工艺过程进行分析,认为湿法腐蚀工艺引入钾离子(K+)污染是造成键合失效的主要原因,也可以对键合失效现象给出合理的解释。改变工艺参数进行了键合对比实验,结果表明,未受K+污染的键合圆片没有发生键合失效现象。提出了解决键合失效问题的两种方案,并首次提出在Si片表面生长氧化层提高失效区键合强度的方法;从理论上分析了增加SiO2介质层的可行性。强度测试结果表明,在SiO2厚度为150nm时,键合剪切强度达到14MPa,验证了方案的可靠性。利用上述方法制备出微加速度传感器敏感结构。
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| 关 键 词： | 微电子机械系统 阳极键合 微惯性传感器 二氧化硅 钾离子污染 键合失效 |
Research on the Failed Mechanism of Anodic Bonding of Silicon to Glass |
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| Wu Zhengwei,Chen Deyong,Xia Shanhong.Research on the Failed Mechanism of Anodic Bonding of Silicon to Glass[J].Micronanoelectronic Technology,2010,47(10). |
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| Authors: | Wu Zhengwei Chen Deyong Xia Shanhong |
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| Affiliation: | Wu Zhengwei1,2,Chen Deyong1,Xia Shanhong1 (1.State Key Laboratory of Transducer Technology,Institute of Electronics,Chinese Academy of Sciences,Beijing 100190,China,2.Graduate University of Chinese Academy of Sciences,Beijing 100080,China) |
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| Abstract: | The bonding invalidation in the center field of bonding wafers was found during the fabrication of micro inertia sensors based on the anodic bonding of silicon to glass.The bonding mechanism and the bonding process were analyzed.The conclusion shows that the main reason of the disabled bonding is the accumulation of potassium ions in the bonding interface and the potassium ions are from the wet KOH etching process before bonding,which can give a reasonable explanation for the disabled bonding.Bonding experi... |
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| Keywords: | MEMS anodic bonding micro inertia sensors SiO2 potassium contamination bonding invalidation |
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