Improved electrical characteristics of CoSi2 usingHF-vapor pretreatment |
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| Authors: | Wu YH Chen WJ Chang SL Chin A Gwo S Tsai C |
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| Affiliation: | Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu; |
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| Abstract: | We have developed a simple process to form epitaxial CoSi2 for shallow junctions. Prior to metal deposition, the patterned wafers were treated with HF-vapor passivation. As observed by scanning tunneling microscopy (STM), this HF treatment drastically improves the native oxide-induced surface roughness. The epitaxial behavior was confirmed by cross-sectional transmission electron microscopy (TEM). Decreased sheet resistance and leakage current, and improved thermal stability are displayed by the HF treated samples, which is consistent with STM and TEM results |
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