首页 | 本学科首页   官方微博 | 高级检索  
     


Self‐Assembled Quasi‐3D Nanocomposite: A Novel p‐Type Hole Transport Layer for High Performance Inverted Organic Solar Cells
Authors:Jiaqi Cheng  Hong Zhang  Yong Zhao  Jian Mao  Can Li  Shaoqing Zhang  Kam Sing Wong  Jianhui Hou  Wallace C. H. Choy
Affiliation:1. Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China;2. Institute of Chemistry, Chinese Academy of Sciences, Beijing, China;3. Department of Physics, The Hong Kong University of Science and Technology, Hong Kong, China
Abstract:Hole transport layer (HTL) plays a critical role for achieving high performance solution‐processed optoelectronics including organic electronics. For organic solar cells (OSCs), the inverted structure has been widely adopted to achieve prolonged stability. However, there are limited studies of p‐type effective HTL on top of the organic active layer (hereafter named as top HTL) for inverted OSCs. Currently, p‐type top HTLs are mainly 2D materials, which have an intrinsic vertical conduction limitation and are too thin to function as practical HTL for large area optoelectronic applications. In the present study, a novel self‐assembled quasi‐3D nanocomposite is demonstrated as a p‐type top HTL. Remarkably, the novel HTL achieves ≈15 times enhanced conductivity and ≈16 times extended thickness compared to the 2D counterpart. By applying this novel HTL in inverted OSCs covering fullerene and non‐fullerene systems, device performance is significantly improved. The champion power conversion efficiency reaches 12.13%, which is the highest reported performance of solution processed HTL based inverted OSCs. Furthermore, the stability of OSCs is dramatically enhanced compared with conventional devices. The work contributes to not only evolving the highly stable and large scale OSCs for practical applications but also diversifying the strategies to improve device performance.
Keywords:hole transport layers  non‐fullerene solar cells  organic solar cells  quasi‐3D nanocomposite  stability
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号