Accurate Extraction of Charge Carrier Mobility in 4‐Probe Field‐Effect Transistors |
| |
Authors: | Hyun Ho Choi Yaroslav I Rodionov Alexandra F Paterson Julianna Panidi Danila Saranin Nikolai Kharlamov Sergei I Didenko Thomas D Anthopoulos Kilwon Cho Vitaly Podzorov |
| |
Affiliation: | 1. Department of Physics, Rutgers University, Piscataway, NJ, USA;2. Department of Chemical Engineering and Center for Advanced Soft Electronics, Pohang University of Science and Technology (POSTECH), Pohang, South Korea;3. Department of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology “MISiS”, Moscow, Russia;4. Institute for Theoretical and Applied Electrodynamics RAS, Moscow, Russia;5. Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia;6. Department of Physics and Centre for Plastic Electronics, Imperial College London, South Kensington, London, UK |
| |
Abstract: | Charge carrier mobility is an important characteristic of organic field‐effect transistors (OFETs) and other semiconductor devices. However, accurate mobility determination in FETs is frequently compromised by issues related to Schottky‐barrier contact resistance, that can be efficiently addressed by measurements in 4‐probe/Hall‐bar contact geometry. Here, it is shown that this technique, widely used in materials science, can still lead to significant mobility overestimation due to longitudinal channel shunting caused by voltage probes in 4‐probe structures. This effect is investigated numerically and experimentally in specially designed multiterminal OFETs based on optimized novel organic‐semiconductor blends and bulk single crystals. Numerical simulations reveal that 4‐probe FETs with long but narrow channels and wide voltage probes are especially prone to channel shunting, that can lead to mobilities overestimated by as much as 350%. In addition, the first Hall effect measurements in blended OFETs are reported and how Hall mobility can be affected by channel shunting is shown. As a solution to this problem, a numerical correction factor is introduced that can be used to obtain much more accurate experimental mobilities. This methodology is relevant to characterization of a variety of materials, including organic semiconductors, inorganic oxides, monolayer materials, as well as carbon nanotube and semiconductor nanocrystal arrays. |
| |
Keywords: | conjugated polymers field‐effect transistors mobility molecular crystals organic semiconductors |
|
|