Surface‐Functionalization‐Mediated Direct Transfer of Molybdenum Disulfide for Large‐Area Flexible Devices

The transfer of synthesized large‐area 2D materials to arbitrary substrates is expected to be a vital step for the development of flexible device fabrication processes. The currently used hazardous acid‐based wet chemical etching process for transferring large‐area MoS₂ films is deemed to be unsuitable because it significantly degrades the material and damages growth substrates. Surface energy‐assisted water‐based transfer processes do not require corrosive chemicals during the transfer process; however, the concept is not investigated at the wafer scale due to a lack of both optimization and in‐depth understanding. In this study, a wafer‐scale water‐assisted transfer process for metal–organic chemical vapor‐deposited MoS₂ films based on the hydrofluoric acid treatment of a SiO₂ surface before the growth is demonstrated. Such surface treatment enhances the strongly adhering silanol groups, which allows the direct transfer of large‐area, continuous, and defect‐free MoS₂ films; it also facilitates the reuse of growth substrate. The developed transfer method allows direct fabrication of flexible devices without the need for a polymeric supporting layer. It is believed that the proposed method can be an alternative defect‐ and residue‐free transfer method for the development of MoS₂‐based next‐generation flexible devices.