低能大流强氢离子辐照对钨的刻蚀行为

在聚变相关的钨(W)偏滤器辐照下，研究了低能大流强氢(H)离子辐照对多晶钨材料的刻蚀行为。使用扫描电子显微镜(SEM)、导电原子力显微镜和基于SEM的电子背散射衍射等手段研究了大流强(~10²² ions/m²·s)、剂量为1.0×10²⁶ ions/m²、能量为5~200 eV的氢离子辐照对多晶W材料表面刻蚀行为的影响。结果表明，随着H离子辐照能量的增加W的溅射率迅速提高，W表面发生刻蚀后产生条纹状结构，而且同一晶粒上条纹的方向具有一致性，条纹两侧的缺陷分布明显不同，意味着W表面的刻蚀优先沿某一特定晶面方向进行。

Etching Behavior of Tungsten under Irradiation of Low Energy and High Flux Hydrogen Ions

Regarding to conditions of the fusion-related tungsten (W) divertor, the etching behavior of polycrystalline W under the irradiation of low-energy and high-flux hydrogen ions, namely the flux of ca 10²² ions/m²·s, dose of 1.0×10²⁶ ions/m² and energy of 5~200 eV was investigated by means of scanning electron microscopy SEM with EBSD and conductive atomic force microscopy. The findings suggest that the sputtering yield of W is strongly dependent on the ions energy, the sputtering rate increases rapidly with the increase of H ions energy; After irradiation, a texture of parallel stripes with a special orientation for every grain may emerge on the irradiated surface, but the distribution of defects on both sides of every stripe is obviously different, which means that the etching of W surface is preferentially occur along a certain face of W crystal grains.