超深亚微米非对称Halo LDD低功耗新器件的研究分析

提出了一种新的器件结构——非对称Halo L DD低功耗器件,该器件可以很好地抑制短沟效应,尤其可以很好地改善DIBL效应、热载流子效应以及降低功耗等,是低功耗高集成度电路的优选结构之一.分析了非对称HaloL DD器件的主要特性,并将其与常规结构、非对称L DD结构、非对称Halo结构的器件进行了比较并进行了参数优化分析.

Simulation and Analysis of Ultra Deep Sub-Micron Asymmetrical Halo LDD Low Power Device

A novel n-MOSFET device structure,named as asymmetrical Halo LDD Low Power device,is proposed.The device not only can effectively suppress the short-channel effect (SCE),the drain-induced barrier lowering (DIBL) and hot carrier effect,but also attribute to reduce power dissipation.Aiming at the better application in the low power circuit,device performance of asymmetrical Halo LDD structure is investigated in comparing with normal device,asymmetrical Halo device and asymmetrical LDD device.Furthermore,the optimal structure is analyzed by changing the key device parameters.