| GaAs大功率器件内匹配技术研究 |
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| 引用本文： | 邱旭. GaAs大功率器件内匹配技术研究[J]. 半导体技术, 2010, 35(8): 780-783. DOI: 10.3969/j.issn.1003-353x.2010.08.009 |
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| 作者姓名： | 邱旭 |
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| 作者单位： | 中国电子科技集团公司,第十三研究所,石家庄,050051 |
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| 摘 要： | 介绍了GaAs大功率器件内匹配技术的基本原理,包括匹配电路原理、内匹配元件的参数计算方法等.以C波段40 W大功率器件为例讲述了内匹配技术在GaAs功率器件设计中的应用.通过大信号建模获得大栅宽器件模型,通过ADS软件进行内匹配电路参数的优化计算.通过电路制作及调试,实现了大功率器件的性能.经测试,当器件Vds=9 V时,在5.2～5.8 GHz频段内,输出功率Po≥40 W,功率增益Gp≥9 dB.测量值和设计值基本吻合.
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| 关 键 词： | 内匹配技术 大功率 砷化镓场效应晶体管 大信号模型 |
Study on the Internally Matched Technique of High Power GaAs FETs |
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| Qiu Xu. Study on the Internally Matched Technique of High Power GaAs FETs[J]. Semiconductor Technology, 2010, 35(8): 780-783. DOI: 10.3969/j.issn.1003-353x.2010.08.009 |
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| Authors: | Qiu Xu |
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| Affiliation: | Qiu Xu(The 13th Research Institute,CETC,Shijiazhuang 050051,China) |
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| Abstract: | The basic principle of internally matched technology of a high power GaAs FETs is described,including the principle of matched circuit,the parameter calculate method of internally matched elements,etc.With the example of C-band 40 W power device,the application of internally matched technology for GaAs power device design is introduced.By building large-signal model,a wide-gatewidth device model was got.The internal matched circuit parameters were optimized and calculated using ADS software.After manufactur... |
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| Keywords: | internally matched technology high power GaAs FET large-signal model |
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