沉积温度对等离子增强化学气相沉积TiN薄膜内应力的影响

实验表明,高速钢基体上的PECV-TiN薄膜处于压应力状态,其绝对值随沉积温度的升高而降低,反映微观组织状态及其不均匀性的衍射峰半高宽亦呈下降趋势,但晶体的择优取向受沉积温度影响较小。分析认为PECVD-TiN薄膜受离子轰击的影响较大,正常沉积温度下其内应力以本征应力为主,大小与薄膜的显微组织关系密切。较高温度下,热应力占主导地位,其大小主要决定于膜、基的热膨胀系数之差。

EFFECT OF DEPOSITION TEMPERATURE ON THE INTERNAL STRESSES IN PLASMA-ENHANCED CHEMICAL VAPOUR-DEPOSITED TiN THIN FILMS

The experiments indicate that the plasma assisted chemical vapour-deposited TiN film is in compressive stress state on the substrate of high speed steel, the stress magnitude as well as the width of diffraction profile decrease with the increase of depositing temperature, but the crystal preferred orientation of the film shows mere effects, It is evident that the formation of internal stress in the PACVD process is related strongly to the ion-bormbardment energy. The dominant factor in the development of internal stresses in the film appears to be the intrinsic one under the normally depositing temperatures, the thermal stress only plays an important role under relatively higher temperatures.