Analysis of the temperature dependence of hot-carrier-induceddegradation in bipolar transistors for Bi-CMOS |
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Authors: | Momose HS Iwai H |
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Affiliation: | ULSI Res. Center, Toshiba Corp., Kawasaki; |
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Abstract: | The temperature dependence of emitter-base reverse stress degradation in bipolar transistors for Bi-CMOS circuits was studied. A suitable measure of degradation in the operating temperature range was chosen after careful consideration of the fact that bipolar transistor characteristics are very sensitive to temperature changes. The worst-case temperature conditions within the transistors' operating range were determined. Degradation was found to be worst at around 50°C-a result of a tradeoff between thermal recovery from degradation and the effects of bandgap narrowing on bipolar characteristics. The recovery phenomena which had taken place after degradation were also investigated in detail |
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