Enhancement of the Thermoelectric Performance
of Bi0.4Sb1.6Te3 Alloys by In and Ga Doping |
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| Authors: | Kyu-Hyoung Lee Sungwoo Hwang Byungki Ryu Kyunghan Ahn Jongwook Roh Daejin Yang Sang-Mock Lee Hyunsik Kim Sang-Il Kim |
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| Affiliation: | 1. Advanced Materials Research Center, Samsung Advanced Institute of Technology, Yong-In, 446-712, South Korea
2. Department of Materials Science, California Institute of Technology, Pasadena, CA, 91125, USA
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| Abstract: | We report an enhancement of the thermoelectric figure of merit in polycrystalline In- and Ga-doped Bi0.4Sb1.6Te3 compounds. Via the controlled doping of In or Ga, the lattice thermal conductivity was effectively reduced by strong point-defect phonon scattering while the power factor was not significantly changed due to the similarity of the density of states near the valence-band maximum between undoped and In- or Ga-doped compositions. An enhanced ZT of 1.2 at 320 K was obtained in 0.5 at.% In-doped Bi0.4Sb1.6Te3 compound by these synergetic effects. |
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