Te vapor pressure dependence of the pn junction properties of PbTe liquid phase epitaxial layers |
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| Authors: | Nugraha Wataru Tamura Osamu Itoh Ken Suto Junichi Nishizawa |
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| Affiliation: | (1) Department of Engineering Physics, Bandung Institut of Technology JL, Ganesha 10, 40132 Bandung, Inodnesia;(2) Department of Materials Science, Faculty of Engineering, Tohoku University, Aramakiaza Aoba, 980 Sendai, Japan;(3) Semiconductor Research Institute, Kawauchi Aoba, 980 Sendai, Japan |
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| Abstract: | The pn junction characteristics of the PbTe epitaxial layers grown on PbTe substrates are investigated. Both the substrate
crystals and the epitaxial layers are grown under controll Te vapor pressures. The ideality factors n of pn junctions decrease
close to 1 in the temperature region from 40K to about 120K, but then increase with increasing temperature. The increase of
n is more pronounced for higher Te vapor pressure. As a possible origin of the recombination current, deep levels with Ed=0.09 eV are found from Hall measurements for pn junctions grown under higher Te vapor pressure. |
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| Keywords: | Liquid phase epitaxy PbTe p-n junctions |
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