Chemical beam epitaxial growth of GaInP using uncracked trisdimethylaminophosphine |
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| Authors: | H. H. Ryu M. H. Jeon J. Y. Leem H. J. Song L. P. Sadwick G. B. Stringfellow |
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| Affiliation: | (1) Center for Nano Manufacturing, School of Nano Engineering, Inje University, Obang-Dong, Gimhae-Shi, Gyongnam, 621-749, Korea;(2) Department of Electrical and Computer Engineering, The University of Utah, Salt Lake City, UT 84112, USA;(3) Department of Material Science & Engineering, The University of Utah, Salt Lake City, UT 84112, USA |
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| Abstract: | Gallium indium phosphide (Ga x In1−x P) epitaxial layers were grown on GaAs substrates by chemical beam epitaxy (CBE) without thermally precracking the group V precursor. Trisdimethylaminophosphine (TDMAP), triisopropylgallium (TIPGa), and ethyldimethylindium (EDMIn) were used as the phosphorus, gallium and indium sources, respectively. Ga x In1−x P was grown without group V precracking for substrate temperatures in the range of 400–520 °C. Above 500 °C, the epilayers had a hazy appearance presumably due to being phosphorus deficit. A strong solid composition dependence on substrate temperature was observed. The samples were In-rich at low growth temperatures and Ga-rich at high growth temperatures. It was possible to grow the Ga x In1−x P epilayers over a large composition range with good morphology and strong photoluminescence. Values of full width at half maximum were as low as 45 meV at 14 K photoluminescence measurements. |
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