A linear 60 GHz 65 nm-CMOS power amplifier realization and characterization for OFDM signal |
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| Authors: | Sofiane Aloui Nicolas Delaunay Eric Kerherve Nathalie Deltimple Robert Plana Didier Belot |
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| Affiliation: | (1) Universite de Bordeaux 1, IMS Laboratory, 351 Cours de la Liberation, 33405 Talence Cedex, France;(2) LAAS-CNRS, 7 avenue du Colonel Roche, 31077 Toulouse Cedex 04, France;(3) STMicroelectronics, Central R&D, 38926 Crolles Cedex, France |
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| Abstract: | A millimeter-wave Power Amplifier (PA) based on a 65nm CMOS technology from STMicroelectronics has been designed. The targeted
feature is the unlicensed band around 60 GHz suitable for wireless personal area network application (WPAN). To optimize the
linearity, the PA is designed under class A biasing to have an output compression point (OCP1) close to its saturated Power (P
sat). S-parameters and large signal measurement results are demonstrated and compared with electromagnetic simulations. The PA
offers a P
sat of 8.3 dBm, an OCP1 of 6 dBm and a gain of 6.7 dB. The die area is 0.29 mm2 with pads. Considering those results, one-tone simulations are not sufficient to characterize the linearity performances
of the PA in its real conditions of use. Consequently, two-tone simulations are firstly performed. After, linearity figures
of merit (FoM) are discussed applying an orthogonal frequency-division multiplexing (OFDM) modulated signal. The PA offers
an adjacent channel power ratio (ACPR) of 15 dB and an error vector magnitude (EVM) of 20% at PA compression operating mode. |
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