A compact 43-GHz monolithic differential VCO in 0.5-/spl mu/m InP DHBT technology |
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Authors: | Yu M. Ward R.J. Newgard R.A. Urteaga M. |
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Affiliation: | Rockwell Collins Inc, Cedar Rapids, IA, USA; |
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Abstract: | A compact monolithic integrated differential voltage controlled oscillator (VCO) using 0.5-/spl mu/m emitter width InP/InGaAs double-heterostructure bipolar transistors with a total chip size of 0.42 mm /spl times/ 0.46 mm is realized by using cross-coupled configuration for extremely high frequency satellite communications system applications. The device performance of F/sub max/ greater than 320 GHz at a current density of 5 mA//spl mu/m/sup 2/ and 5-V BVceo allows us to achieve a low phase noise 42.5-GHz fundamental VCO with -0.67-dBm output power. The VCO exhibits the phase noise of -106.8 dBc/Hz at 1-MHz offset and -122.3 dBc/Hz at 10-MHz offset from the carrier frequency. |
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