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基于IDDQ测试的VLSI门内电阻式桥接故障仿真
引用本文:许爱强, 唐小峰, 牛双诚, 杨智勇. 基于IDDQ测试的VLSI门内电阻式桥接故障仿真[J]. 北京工业大学学报, 2016, 42(1): 128-133. DOI: 10.11936/bjutxb2015040078
作者姓名:许爱强  唐小峰  牛双诚  杨智勇
作者单位:海军航空工程学院科研部,烟台,264001;海军航空工程学院科研部,烟台 264001;中国人民解放军92514部队,烟台 264007;海军航空工程学院科研部,烟台 264001;中国人民解放军91370部队,福州 350015
基金项目:"泰山学者"建设工程专项经费资助项目,中国博士后科学基金资助项目
摘    要:为真实模拟集成电路中的桥接故障并评价测试集质量,提出一种基于静态电源电流(IDDQ)测试的逻辑电路门内电阻式桥接故障仿真算法.首先,针对该故障类型,提出一种覆盖率评价标准;其次,利用电路级故障注入与仿真方法构造基本逻辑门单元的故障字典;最后,通过在逻辑电路功能仿真中查询故障信息实现门级的故障仿真.仿真实验表明:相比于传统方法,所提方法能更好地反映测试集对真实桥接故障的覆盖效果,并具备良好的仿真效能.

关 键 词:超大规模集成电路(VLSI)测试  电阻式桥接故障  静态电源电流(IDDQ)测试  故障仿真  故障覆盖率
收稿时间:2015-04-25

Simulation of Intra-gate Resistive Bridging Faults in VLSI Based on IDDQ Testing
XU Aiqiang, TANG Xiaofeng, NIU Shuangcheng, YANG Zhiyong. Simulation of Intra-gate Resistive Bridging Faults in VLSI Based on IDDQ Testing[J]. Journal of Beijing University of Technology, 2016, 42(1): 128-133. DOI: 10.11936/bjutxb2015040078
Authors:XU Aiqiang  TANG Xiaofeng  NIU Shuangcheng  YANG Zhiyong
Abstract:To realistically simulate the bridging faults in VLSI and to evaluate the quality of the test set, an intra-gate non-zero resistance bridging fault simulation algorithm based on IDDQ testing was proposed. First, a fault coverage criteria was proposed for this type of fault. Second, the fault dictionary for every type of the primitive logic gate cells was constructed by using the circuit-level fault injection and simulation method. Lastly, the gate-level fault simulation was accomplished by querying the fault dictionary when performing the functional simulation of the target logic circuit. Experimental results show that, comparing with the traditional approach, the proposed method in this paper can better reflect the fault covering ability of the test set against the realistic bridging faults and the simulation is efficient.
Keywords:VLSI testing  resistive bridging fault  IDDQ testing  fault simulation  fault coverage
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