| 一种新型背面接触式H~+-ISFET |
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| 引用本文： | 陈德英,周天舒.一种新型背面接触式H~+-ISFET[J].传感器与微系统,1992(4):12-15. |
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| 作者姓名： | 陈德英 周天舒 |
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| 作者单位： | 东南大学微电子中心
(陈德英，周天舒)，东南大学微电子中心(唐国洪) |
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| 摘 要： | 简要地介绍了氢离子敏场效应晶体管(H~+-ISFET)的基本结构和工作原理,提出了一种新型背面接触式H~+-ISFET。对该结构在版图、工艺设计中的有关问题,进行了探讨。最后指出:它在pH值的测量中有较好的实用价值。
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| 关 键 词： | 氢离子敏场效应晶体管 背面接触 |
A New H~+-ISFET with Backside Contacts |
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| Chen Deying Zhou Tianshu Tang Guohong.A New H~+-ISFET with Backside Contacts[J].Transducer and Microsystem Technology,1992(4):12-15. |
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| Authors: | Chen Deying Zhou Tianshu Tang Guohong |
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| Affiliation: | Southeast university |
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| Abstract: | The basic structure and working principle of H+ Ion Sensitive fieldeffect transistors(H+-ISFET)are briefly introduced,A new H+-ISFET with backside contacts has been developed.Some approaches to the layout design and technological design of the structure have been made,Finally, It is pointed out that the davice can ba applied to the measurement of pH values. |
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| Keywords: | H+-ISFET Backside contacts |
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