| SiGe HBT基区结构的优化对欧拉电压的影响 |
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| 引用本文： | 王玉东,徐阳,张伟,李希有,刘爱华.SiGe HBT基区结构的优化对欧拉电压的影响[J].微电子学,2006,36(5):601-603. |
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| 作者姓名： | 王玉东 徐阳 张伟 李希有 刘爱华 |
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| 作者单位： | 清华大学,微电子学研究所,北京,100084 |
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| 摘 要： | 欧拉电压是SiGe HBT一项重要的直流参数,受到基区结构(如Ge组分)的影响。研究发现,高温过程会导致硼的外扩散,从而影响异质结的位置,使欧拉电压受到影响。实验发现,通过优化基区结构,加厚CB结处i-SiGe厚度,可获得VA=520 V,βVA=164,320 V的SiGe HBT。
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| 关 键 词： | SiGeHBT 欧拉电压 硼外扩散 |
| 文章编号： | 1004-3365（2006）05-0601-03 |
| 收稿时间： | 2006-04-29 |
| 修稿时间： | 2006-04-292006-06-22 |
Effect of Base Structure Optimization of SiGe HBTs on Early Voltage |
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| WANG Yu-dong,XU Yang,ZHANG Wei,LI Xi-you,LIU Ai-hua.Effect of Base Structure Optimization of SiGe HBTs on Early Voltage[J].Microelectronics,2006,36(5):601-603. |
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| Authors: | WANG Yu-dong XU Yang ZHANG Wei LI Xi-you LIU Ai-hua |
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| Affiliation: | Institute of Microelectronics , Tsinghua University, Beij ing 100084, P. R. China |
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| Abstract: | As one of the important DC parameters of SiGe HBTs, Early voltage is affected by base structure, such as Ge content at the interface of collector-base junction. Effects of boron out-diffusion on Early voltage are investigated. When high temperature processes are involved in the fabrication of SiGe HBTs, boron atoms diffuse towards N-collector layer and emitter layer from SIMS analysis and the Ge content at the interface of collector-base junction decreases, so that the Early voltage decreases. By increasing the depth of i-SiGe at the collector and base interface, devices with VA = 520 V and flVA = 164,320 V are fabricated. |
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| Keywords: | SiGe HBT Early voltage Boron out-diffusion |
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