Ta/Au ohmic contacts to n-type ZnO |
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Authors: | H. Sheng N. W. Emanetoglu S. Muthukumar B. V. Yakshinskiy S. Feng Y. Lu |
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Affiliation: | (1) Department of Electrical and Computer Engineering, Rutgers University, 08854 Piscataway, NJ;(2) Department of Ceramic and Materials Engineering, Rutgers University, USA;(3) Department of Physics and Astronomy, Rutgers University, USA |
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Abstract: | Ta/Au ohmic contacts are fabricated on n-type ZnO (∼1 × 1017 cm−3) epilayers, which were grown on R-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). After growth and metallization, the samples are annealed at 300°C and 500°C for 30 sec in nitrogen ambient. The specific contact resistance is measured to be 3.2×10−4 Ωcm2 for the as-deposited samples. It reduces to 5.4×10−6 Ωcm2 after annealing at 300°C for 30 sec without significant surface morphology degradation. When the sample is annealed at 500°C for 30 sec, the specific contact resistance increases to 3.3 × 10−5 Ωcm2. The layer structures no longer exist due to strong Au and Ta in-diffusion and O out-diffusion. The contact surface becomes rough and textured. |
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Keywords: | Zinc oxide (ZnO) thin films metal-organic chemical-vapor deposition (MOCVD) ohmic contact wide bandgap material |
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