| 多晶半导体三碱光电阴极厚度的理论研究 |
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| 引用本文： | 常本康 刘元震. 多晶半导体三碱光电阴极厚度的理论研究[J]. 真空电子技术, 1994, 0(1): 13-16 |
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| 作者姓名： | 常本康 刘元震 |
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| 作者单位： | 华东工学院光电技术系 |
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| 摘 要： | 本文利用辐射强度指数衰减率和多碱阴极光吸收系数公式，首次研究了多晶半导体三碱光电阴极的最佳厚度。研究结果表明：当Ｉａ／Ｉ。大于０．４时，阴极厚度应在１００ｎｍ以上，并且Ｄ随Ｉａ／Ｉ。上升而增加，高能光子产生的光电子出现在阴极内表面层。并首次从理论上预测了对红外敏感的在可见光范围具有很高响应的三碱阴极的最佳厚度为１２０ｎｍ左右，这与实验结果非常一致。
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| 关 键 词： | 光电阴极，光吸收，多晶半导体 |
A Theoretical Study of Thickness on Polycrystalline Semiconductor Multialkali Photocathode |
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| Chang Benkang and Liu Yuanzhen. A Theoretical Study of Thickness on Polycrystalline Semiconductor Multialkali Photocathode[J]. Vacuum Electronics, 1994, 0(1): 13-16 |
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| Authors: | Chang Benkang and Liu Yuanzhen |
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| Abstract: | ptimum thickness on polycrystalline .Semiconductor mulhalkali Photocathode is studied by radiation intensity exponential attenuation rate and formula of optical absorption coefficient on multialkali Photocathode. It is clear that if Ia/I0>0. 4,photocathode thickness D will exed 100nm or so. If Ia/I0 increases, D will add too. Excited Photocathode. It is calculated that optimum thickness on multialkali photocathodes that possess a good response in visible and infrared must be 120 nm or so. The results with with the experimental results. |
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| Keywords: | Photocathode Optical absorption Polycrystalline semiconductor |
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