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| 不同剂量率LC54HC04RH电路的电离辐射效应 | |
| 引用本文： | 张正选,何宝平,罗晋生,袁仁峰.不同剂量率LC54HC04RH电路的电离辐射效应[J].固体电子学研究与进展,2000,20(4):439-443. |
| 作者姓名： | 张正选 何宝平 罗晋生 袁仁峰 |
| 作者单位： | 1. 西安交通大学微电子所,710049;西北核技术研究所,西安,710024 2. 西北核技术研究所,西安,710024 3. 西安交通大学微电子所,710049 |
| 摘 要： | 对 L C54HC0 4 RH电路在不同辐射剂量率进行了电离辐射实验。分析了该电路的阈值电压随辐射剂量率的变化关系。实验结果表明 :在辐射剂量率处于 3× 10 -4 Gy(Si) / s到 1.98×10 -1Gy(Si) / s范围内 ,辐射感生界面陷阱电荷随辐射剂量率的减少而增加。辐射感生界面陷阱电荷是导致该电路在空间辐射环境下失效的主要原因。 |
| 关 键 词： | 反相器 电离辐射效应 辐射剂量率 界面陷阱电荷 |
Ionization Radiation Effect on LC54HC04RH under Differential Dose Rate |
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| Zhang Zhengxuan,He Baoping,Luo Jinsheng,Yuan Renfeng.Ionization Radiation Effect on LC54HC04RH under Differential Dose Rate[J].Research & Progress of Solid State Electronics,2000,20(4):439-443. | |
| Authors: | Zhang Zhengxuan He Baoping Luo Jinsheng Yuan Renfeng |
| Affiliation: | Zhang Zhengxuan 1,2 He Baoping 2 Luo Jinsheng 1 Yuan Renfeng 2 |
| Abstract: | The experiment of ionization radiation effect on LC54HC04RH was performed. The threshold voltage's shift versus the dose rate was analyzed on this device. The experimental results show that the number of interface traps charge at given total dose rate decreased at dose rates from 1.98×10 -1 Gy(Si)/s to 3×10 -4 Gy(Si)/s; the interface traps charge induced by the irradiation were the main reason which induced this device failure at space environments. |
| Keywords: | inverter ionizing radiation effect the radiation dose rate the interface state |
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