Processing parameters for selective intermixing of GaAs/AIGaAs quantum wells |
| |
Authors: | Xin Wen Jim Y Chi Emil S Koteles Boris Elman Paul Melman |
| |
Affiliation: | (1) GTE Laboratories Incorporated, 40 Sylvan Road, 02254 Waltham, MA |
| |
Abstract: | Some of the parameters which determine the amount of intermixing of GaAs/AIGaAs quantum wells (QWs) using SiO2 capping and rapid thermal annealing (RTA) have been studied using photoluminescence (PL) techniques. The degree of intermixing
of QWs was found to be larger for thicker SiO2 capping layers and for shorter distances between the QWs and the oxide-wafer interface. A maximum PL energy difference of
90 meV was observed between the region covered by a 1.3 μm thick oxide layer and the non-oxide region in a wafer that was
annealed at 1100° C for 15 s. |
| |
Keywords: | Quantum wells superlattices photoluminescence rapid thermal annealing |
本文献已被 SpringerLink 等数据库收录! |