介质谐振器反馈型GaAs FET振荡器

本文扼要分析了高Q介质反馈型FET振荡器的原理,认为介质反馈型振荡器类同于高Q介质谐振器与FET栅极耦合的反射型振荡器。实验表明,在-40～+55℃范围内,频率稳定度达2.0ppm/℃,最佳可小于0.2ppm/℃。同时,介质温度系数对振荡电路的过补偿比欠补偿更有利于提高输出功率温度稳定性。

A GaAs FET Oscillator with a Dielectric Resonator Feedback

This paper briefly presents the principle of FET oscillator with a Hi-Q dielectric resonator feedback, which is considered to be similar to that of a reflection oscillator with a Hi-Q dielectric resonator coupled to the gate of a FET. The experiemeats show that frequency stability is up to 2.0ppm/℃, with an optimum of less than 0.2ppm/℃ at the temperature range of -40- + 55℃. Meanwhile, for the oscillator circuit, overcompensation by larger dielectric temperature coefficient is more beneficial to increasing the temperature stability of output power than uader-compensation by smaller one.