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电力电子功率MOSFET管谐振驱动技术的分析
引用本文:郭晓君,林维明,徐玉珍. 电力电子功率MOSFET管谐振驱动技术的分析[J]. 江苏电器, 2009, 0(9): 1-4
作者姓名:郭晓君  林维明  徐玉珍
作者单位:福州大学电气工程与自动化学院,福建福州350108
基金项目:福建省教育厅B类资助项目(JB07005)
摘    要:为了减小体积,加快动态响应速度,减少功率MOSFET管的驱动损耗,提高变换器的效率,对现有谐振驱动电路方案的优缺点进行评估。对传统驱动和谐振驱动技术方案进行比较,分析了连续电感电流、不连续电感电流和具有变压器的三种电路方案。认为驱动电路的发展方向是:既具有连续电感电流方案的简洁易控制,又具有初始化脉冲式电感电流的低导通损耗,同时尽量减少所用的有源器件。

关 键 词:谐振驱动  同步整流  功率MOSFET管  驱动损耗

Analysis of Power MOSFET Resonant Gate Drive Technology in Power Electronics
GUO Xiao-jun,LIN Wei-ming,XU Yu-zhen. Analysis of Power MOSFET Resonant Gate Drive Technology in Power Electronics[J]. , 2009, 0(9): 1-4
Authors:GUO Xiao-jun  LIN Wei-ming  XU Yu-zhen
Affiliation:(College of Electrical Engineering and Automation, Fuzhou University, Fuzhou 350108, China)
Abstract:In order to reduce volume, speed up dynamic response speed, reduce drive losses of power MOSFET and raise efficiency of converter, advantages and disadvantages of existing resonant gate drive circuit plan were evaluated. Comparison was made between traditional drive and resonant gate drive plans, three kinds of circuit plans of continuous inductive current, non-continuous inductive current and the circuit with transformer were analyzed. It is considered that the development direction of the drive circuit is either with simple and easy control of continuous inductive plan or with low conduction losses of initialized pulse type inductive current, and in the meantime the used source apparatus is reduced as possible.
Keywords:resonant gate drive  synchronous rectifier  power MOSFET  drive loss
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