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Dislocations at the interface between sapphire and GaN |
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| Authors: | A. Lankinen T. Lang S. Suihkonen O. Svensk A. Säynätjoki T. O. Tuomi P. J. McNally M. Odnoblyudov V. Bougrov A. N. Danilewsky P. Bergman R. Simon |
| Affiliation: | 1. Micro and Nanosciences Laboratory, Helsinki University of Technology (TKK), P.O. Box 3500, Espoo, 02015, Finland 2. Research Institute for Networks and Communications Engineering, Dublin City University, Dublin 9, Ireland 3. OptoGaN Oy, Tietotie 3, Espoo, 02150, Finland 4. A. F. Ioffe Physico-Technical Institute, St. Petersburg, 194021, Russian Federation 5. Kristallographisches Institut, University of Freiburg, Freiburg, 79104, Germany 6. Link?ping University, 58183, Linkoping, Sweden 7. ANKA, Institute for Synchrotron Radiation, Karlsruhe, Germany |
| Abstract: | GaN layers grown by metal organic vapour phase epitaxy on sapphire were imaged by synchrotron radiation X-ray topography. The threading dislocations could not be resolved in the topographs due to their high density, but a smaller density of about 105 cm−2 defects were seen in the interface between GaN and sapphire by utilizing large-area back-reflection topography for the sapphire substrates. The misfit dislocation images in the topographs form a well-resolved cellular network, in which the average cell size is roughly 30 μm. Different cell shapes in the misfit dislocation networks are observed on different samples. Also, images of small-angle grains of similar size were found in transmission section topographs of the GaN layers. |
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