| GexSi1－x／Si超晶格PIN波导探测器结构及性能参数 |
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| 引用本文： | 李娜,刘恩科,李国正. GexSi1－x／Si超晶格PIN波导探测器结构及性能参数[J]. 半导体光电, 1996, 0(3) |
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| 作者姓名： | 李娜 刘恩科 李国正 |
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| 作者单位： | 西安交通大学 |
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| 摘 要： | 从ＰＩＮ波导探测器性能参数的定义出发，阐述了各参数之间的内在联系，说明量子效率与带宽、灵敏度等物理量之间的矛盾现象。通过对具体结构及参数的分析比较，说明结构与参数之间的影响方式以及ＧｅｘＳｉ１－ｘ／Ｓｉ超晶格波导探测器的特有性质，进一步论证了波导探测器的优点
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| 关 键 词： | 半导体器件 波导 光电探测器 量子效率 带宽 |
Structures and performance parameters of Ge x Si 1- x /Si superlattice PIN waveguide detectors |
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| LI Na LIU Enke LI Guozheng. Structures and performance parameters of Ge x Si 1- x /Si superlattice PIN waveguide detectors[J]. Semiconductor Optoelectronics, 1996, 0(3) |
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| Authors: | LI Na LIU Enke LI Guozheng |
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| Abstract: | According to the definition of the performance parameters of PIN waveguide detector,the interrelations of these parameters are described,and the contradictions between a quantum efficiency and a bandwidth,sensivity,etc are explained.An influence of the structure on the parameters and the inherent properties of Ge x Si 1- x /Si superlattice waveguide detectors are mentioned through analysing and comparing practical structures and parameters.And the advantage of the waveguide detectors is further demonstrated. |
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| Keywords: | Semiconductor Devices Waveguide Photodetectors Quantum Efficiency Bandwidth |
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