Bistable operation in semiconductor lasers with inhomogeneous excitation |
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| Authors: | Kawaguchi H Iwane G |
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| Affiliation: | NTT, Musashino Electrical Communication Laboratory, Musashino, Japan; |
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| Abstract: | Bistable operation in InP/InGaAsP/InP DH lasers with a periodic excitation stripe geometry is reported. Bistability is observed within a current range of about 10% of the threshold current for maximum value. The range strongly depends on the stripe geometry and heat sink temperature, and they are controllable. |
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