| InGaAs(P)应变补偿多量子阱结构激光器的理论研究 |
| |
| 引用本文： | 彭宇恒,安海岩,陈维友,刘式墉. InGaAs(P)应变补偿多量子阱结构激光器的理论研究[J]. 中国激光, 1998, 25(4): 289-293 |
| |
| 作者姓名： | 彭宇恒 安海岩 陈维友 刘式墉 |
| |
| 作者单位： | 吉林大学电子工程系 |
| |
| 摘 要： | 从理论上分析了应变补偿多量子阱激光器的阈值特性，并以ＩｎＧａＡｓ（Ｐ）体系为例，分别对应变补偿结构和普通应变多量子阱激光器进行了数值计算。结果表明，具有应变补偿结构的激光器可以获得较大的增益和较小的阈值电流密度。其中，阱材料能带结构的变化是使得应变补偿结构激光器具有上述优良特性的决定性因素。
|
| 关 键 词： | 多量子阱激光器，应变补偿，阈值特性 |
| 收稿时间： | 1997-01-20 |
Theoretical Analysis for InGaAs(P) Strain compensated Multiple quantum well Lasers |
| |
| Peng Yuheng An Haiyan Chen Weiyou Liu Shiyong. Theoretical Analysis for InGaAs(P) Strain compensated Multiple quantum well Lasers[J]. Chinese Journal of Lasers, 1998, 25(4): 289-293 |
| |
| Authors: | Peng Yuheng An Haiyan Chen Weiyou Liu Shiyong |
| |
| Abstract: | The threshold characteristics of strain compensated multi quantum well lasers are analyzed theoretically. Taking the InGaAs(P) system as an example, the strain compensated and common strain multi quantum well lasers have been studied. The results show that we can obtain larger optical gain and lower threshold current by the use of a strain compensated structure. The variation of valence band structure plays an important role in improving the characteristics of the strain compensated structure. |
| |
| Keywords: | multiple quantum well lasers strain compensation threshold characteristics |
| 本文献已被 CNKI 等数据库收录！ |
