The effect of change of voltage acceleration on temperatureactivation of oxide breakdown for ultrathin oxides |
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Authors: | Wu E.Y. McKenna J.M. Lai W. Nowak E. Vayshenker A. |
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Affiliation: | Microelectron. Div., IBM, Essex Junction, VT; |
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Abstract: | We report the effect of change of voltage acceleration on temperature dependence of oxide breakdown for ultra-thin oxides below 6 nm. The time- or charge-to-breakdown (TBD/QBD) is directly measured over a wide range of temperatures (-30°C to 200°C) for several fixed voltages using different area capacitors and long-term stress. Using extensive experimental evidence, we unequivocally demonstrate that this strong temperature dependence of oxide breakdown on ultra-thin oxides is not a thickness effect as previously suggested at least for thickness range investigated in this work. It is a consequence of two experimental facts: 1) voltage-dependent voltage acceleration and 2) temperature-independent voltage acceleration within a fixed TBD window. These results provide a coherent picture for TBD in both voltage and temperature domains for ultra-thin oxides |
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