| 磁控溅射Ge/Si多层膜X射线低角衍射界面结构分析 |
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| 引用本文： | 李宏宁,毛旭.磁控溅射Ge/Si多层膜X射线低角衍射界面结构分析[J].光电子．激光,2000,11(1):72-75. |
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| 作者姓名： | 李宏宁 毛旭 |
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| 作者单位： | 云南大学材料科学与工程系,昆明,650091 |
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| 摘 要： | 本文对磁控溅射不同结构的Ｇｅ／Ｓｉ多层膜样品进行了Ｘ射线衍射的测试和分析,并进一步采用有过渡层的光学多层膜衍射模型对衍射谱进行了拟合;获得了扩散层厚度和分层厚度等多层膜的结构参数,定性讨论了多层膜中互扩散与分层厚度铁关系。计算结果与实验结果符合较好。
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| 关 键 词： | 多层膜 X射线衍射谱 磁控溅射 硅 锗 |
| 修稿时间： | 1999-08-05 |
The Interfacial Structure Analysis of Ge/Si Multilayer Films Fabricated by Magnetron Sputtering |
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| LI Hong-ning,MAO Xu,YANG Yu.The Interfacial Structure Analysis of Ge/Si Multilayer Films Fabricated by Magnetron Sputtering[J].Journal of Optoelectronics·laser,2000,11(1):72-75. |
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| Authors: | LI Hong-ning MAO Xu YANG Yu |
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| Abstract: | The Ge/Si
multilayer films fabricated by magnetron sputtering were characterized by low angle x-ray
diffraction.We analyzed the film structure using a diffusion layer model based on optical
multilayer diffraction theory.The structure parameters of multilayer films are obtained by
fitting the experiment spectra.It shows that the diffusion on layer interface is related
to the thickness ratio of Ge and Si single layer.The simulation result is in good
agreement with experiments. |
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