Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates |
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Authors: | L. P. Avakyants P. Yu. Bokov I. P. Kazakov M. A. Bazalevsky P. M. Deev A. V. Chervyakov |
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Affiliation: | 1.Faculty of Physics,Moscow State University,Moscow,Russia;2.Lebedev Physical Institute,Russian Academy of Sciences,Moscow,Russia |
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Abstract: | The mechanical strains and densities of surface charge states in GaAs layers grown by low-temperature (LT) molecular-beam epitaxy on Si(100) and GaAs(100) substrates are investigated by photoreflectance spectroscopy. Lines corresponding to the fundamental transition (E g ) and the transition between the conduction band and spin-orbit-split valence subband (E g + Δ SO ) in GaAs are observed in the photoreflectance spectra of Si/LT-GaAs structures at 1.37 and 1.82 eV, respectively. They are shifted to lower and higher energies, respectively, relative to the corresponding lines in GaAs/LT-GaAs structures. Comparing the spectra of the Si/LT-GaAs and GaAs/LT-GaAs structures, it is possible to estimate mechanical strains in LT-GaAs layers grown on Si (by analyzing the spectral-line shifts) and the density of charge-carrier states at the GaAs/Si heterointerface (by analyzing the period of Franz–Keldysh oscillations). |
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