Short channel AlGaN/GaN MODFET's with 50-GHz fT and1.7-W/mm output-power at 10 GHz |
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| Authors: | Wu Y-F Keller BP Keller S Nguyen NX Le M Nguyen C Jenkins TJ Kehias LT Denbaars SP Mishra UK |
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| Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA; |
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| Abstract: | A thin barrier-donor layer of 200 Å was used to increase the active input capacitance and improve the extrinsic current-gain cutoff frequency (ft) of short-gate-length AlGaN/GaN MODFETs. 0.2-μm gate-length devices fabricated on such an epi-structure with sheet carrier density of ~8×1012 cm-2 and mobility of 1200 cm2/Vs showed a record ft of 50 GHz for GaN based FETs. High channel saturation current and transconductance of 800 mA/mm and 240 mS/mm respectively were also achieved along with breakdown voltages of 80 V per μm gate-drain spacing. These excellent characteristics translated into a CW output power density of 1.7 W/mm at 10 GHz, exceeding previous record for a solid-state HEMT |
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