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Graphite formation on Ni film by chemical vapor deposition
Authors:Masako Yudasaka   Rie Kikuchi   Takeo Matsui   Yoshimasa Ohki   Mark Baxendale   Susumu Yoshimura  Etsuro Ota
Affiliation:

a Yoshimura π-Electron Materials Project, ERATO, JRDC, c/o Matsushita Research Institute Tokyo, Inc., 3-10-1 Higashi-mita, Tama-ku, Kawasaki 214, Japan

b Department of Chemistry, Faculty of Engineering, Gunma University, Kiryu, Gunma 376, Japan

Abstract:Thin film formation of graphite by chemical vapor deposition using 2-methyl-1,2′-naphthyl ketone as a starting material was carried out on Ni film substrates. On Ni films directly deposited on quartz glass, the graphite films were obtained when the Ni film thickness was above 1 000 Å and above 5 000 Å at 700 °C and 1 000 °C, respectively. Depositions on thinner Ni film substrates comprise amorphous carbon (a-C) or graphite tubes which was owing to the thermal coagulation of the Ni film into droplets. On the other hand, graphite film was obtained on the Ni film with thickness 10 Å when a-C was inserted between the Ni film and the quartz glass. The coagulation of the Ni film is considered to be avoided by inserting a-C layer.
Keywords:Graphite   Nickel   Chemical vapor deposition
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