Efficient breakdown voltage doubler for 10 Gbit/s SiGe modulator drivers |
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| Authors: | Li D.-U. Tsai C.-M. |
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| Affiliation: | SoC Technol. Center, Ind. Technol. Res. Inst., Hsinchu; |
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| Abstract: | A novel intrinsic collector-base capacitance (CCB) feedback network was incorporated into the series-connected voltage balancing (SCVB) circuit configuration to implement 10 Gbit/s SiGe modulator drivers. The driver fabricated in 0.35 mum SiGe BiCMOS process could output 9 VPP differential output swing with rise/fall time (20 to 80%) less than 27 ps. Compared with drivers using only SCVB, the power consumption could be greatly reduced from 2 to 1 W |
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